Memory device and method of fabricating the same

ABSTRACT

A memory cell pillar of a memory device includes a heating electrode having a base portion (leg) and a fin portion (ascender), and a selection device between a first conductive line and the heating electrode. A side surface of the selection device and a side surface of the fin portion extend along a first straight line. A method of fabricating a memory device includes forming a plurality of first insulating walls through a stack structure including a preliminary selection device layer and a preliminary electrode layer, forming a plurality of self-aligned preliminary heating electrode layers, forming a plurality of second insulating walls each between two of the plurality of first insulating walls, and forming a plurality of third insulating walls in a plurality of holes extending along a direction intersecting the plurality of first insulating walls.

PRIORITY STATEMENT

This is a Continuation of U.S. application Ser. No. 15/663,065, filedJul. 28, 2017, which issued as U.S. Pat. No. 10,305,032, on May 28,2019, and a claim of priority is made to Korean Patent Application No.10-2016-0162303, filed on Nov. 30, 2016, in the Korean IntellectualProperty Office, the disclosure of which is hereby incorporated byreference in its entirety.

BACKGROUND

The inventive concept relates to a memory device and to a method offabricating the same. More particularly, the inventive concept relatesto a memory device having a cross-point array structure and to a methodof fabricating the same.

A next-generation integrated non-volatile memory device that has beenproposed is a 3-dimensional cross-point stack-structured memory devicein which a memory cell is arranged at a cross-point between twoelectrodes crossing each other. Furthermore, with the trend of lighter,thinner, and smaller electronics, there is increasing demand in thesemiconductor device industry for more highly integrated semiconductordevices. Accordingly, there are continuous requirements to increase theintegration and scale down cross-point stack-structured memory devices.However, reducing the sizes of components constituting a memory device,such as a 3-dimensional cross-point stack-structured memory device,imposes challenges in maintaining the reliability required for thememory device.

SUMMARY

According to an aspect of the inventive concept, there is provided amemory device including: a first conductive line extending over asubstrate in a first direction; a second conductive line extending overthe first conductive line in a second direction that intersects thefirst direction; a memory cell pillar between the first conductive lineand the second conductive line; and an insulating wall over thesubstrate, the insulating wall facing a side surface of the memory cellpillar, wherein the memory cell pillar includes: a heating electrodelayer, which has an L-shaped cross-section and includes a base portionextending parallel to the first conductive line and a fin portionextending from an end of the base portion in a direction away from thefirst conductive line; and a selection device layer between the firstconductive line and the heating electrode layer, and a side surface ofthe selection device layer, which faces the insulating wall, and a sidesurface of the fin portion, which faces the insulating wall, extendalong a first straight line.

According to another aspect of the inventive concept, there is provideda method of fabricating a memory device, the method including: forming astack structure over a substrate, the stack structure comprising apreliminary selection device layer and a preliminary electrode layer;forming a plurality of first line spaces extending through the stackstructure; forming a plurality of first insulating walls in theplurality of first line spaces, the plurality of first insulating wallsincluding protrusions each protruding upwards from the stack structure;forming a plurality of preliminary heating electrode layers, which coverside surfaces of the protrusions of the plurality of first insulatingwalls; forming a plurality of second line spaces, each of the pluralityof second line spaces being situated between two of the plurality of thefirst insulating walls, and the plurality of second line spacesextending through the stack structure; forming a plurality of secondinsulating walls in the plurality of second line spaces, the pluralityof second insulating walls extending parallel to the plurality of firstinsulating walls; forming a plurality of holes by removing portions ofthe plurality of preliminary heating electrode layers and the stackstructure which extend along a direction intersecting the plurality offirst insulating walls, the holes exposing portions of the preliminaryselection device layer and thereby forming a plurality of selectiondevice layers, and the holes exposing portions of the preliminaryelectrode layer and thereby forming a plurality of electrode layers; andforming a plurality of third insulating walls in the plurality of holes,the plurality of third insulating walls covering side surfaces of theplurality of selection device layers and side surfaces of the pluralityof electrode layers.

According to a further aspect of the inventive concept, there isprovided a method of fabricating a memory device, the method including:forming a preliminary bottom electrode layer, a preliminary selectiondevice layer, and a preliminary intermediate electrode layer on asubstrate one over another in this stated order; forming a plurality offirst line spaces, which extend through the preliminary intermediateelectrode layer, the preliminary selection device layer, and thepreliminary bottom electrode layer; forming a plurality of firstinsulating walls in the plurality of first line spaces, the plurality offirst insulating walls including protrusions each protruding upwardsfrom the preliminary intermediate electrode layer; forming a pluralityof preliminary heating electrode layers and a plurality of preliminaryfirst insulating spacers on the preliminary intermediate electrodelayer, the plurality of preliminary heating electrode layers and theplurality of preliminary first insulating spacers covering side surfacesof the plurality of first insulating walls; forming a plurality ofsecond line spaces each between two of the plurality of first insulatingwalls, the plurality of second line spaces extending through thepreliminary intermediate electrode layer, the preliminary selectiondevice layer, and the preliminary bottom electrode layer; forming aplurality of second insulating walls in the plurality of second linespaces, the plurality of second insulating walls extending parallel tothe plurality of first insulating walls; forming a plurality of holes bypartially removing portions of the plurality of preliminary heatingelectrode layers, the plurality of preliminary first insulating spacers,the preliminary intermediate electrode layer, the preliminary selectiondevice layer, and the preliminary bottom electrode layer which extendalong a direction intersecting the plurality of first insulating walls;and forming a plurality of third insulating walls in the plurality ofholes.

According to a further aspect of the inventive concept, there isprovided a method of fabricating a memory device, the method including:forming a set of parallel first conductive lines on a substrate, each ofthe first conductive lines extending lengthwise in a first directionparallel to an upper surface of the substrate; forming an array ofmemory cell pillars, each of the memory cell pillars extending uprighton a respective one of the first conductive lines in a directionperpendicular to the upper surface of the substrate; and forming a setof parallel second conductive lines, each of the second conductive linesextending lengthwise in a second direction parallel to the upper surfaceof the substrate and crossing over a plurality of the first conductivelines and each of the memory cell pillars extending upright on theplurality of first conductive lines, such that the memory cell pillarsare located at points at which the second conductive lines and the firstconductive lines cross as seen in a plan view of the conductive linesand memory cell pillars. The forming of the array of memory cell pillarsforms resistive memory elements each having a state of resistance thatcan be changed and that stores information corresponding to the state ofresistance, selection devices that serve to allow the memory elements tobe selectively accessed, heating electrodes each having an L-shapedcross section in a vertical plane so as to each have a leg and anascender, and first insulating spacers each disposed on the leg of arespective one of the heating electrodes. The forming of the array ofmemory cell pillars includes forming the heating electrodes asself-aligned with opposite sides of the pillars, and forming theresistive memory elements each directly on both the ascender of arespective one of the heating electrodes and a respective one of thefirst insulating layer spacers.

BRIEF DESCRIPTION OF THE DRAWINGS

The inventive concept will be more clearly understood from the followingdetailed description of examples thereof taken in conjunction with theaccompanying drawings in which:

FIG. 1 is an equivalent circuit diagram of an example of a memory deviceaccording to the inventive concept;

FIG. 2 is a schematic planar layout diagram illustrating main componentsof an example of a memory device according to the inventive concept;

FIG. 3A is a perspective view illustrating main components of an exampleof a memory device according to the inventive concept, and FIG. 3Billustrates cross-sectional views of the main components, respectivelytaken along lines A-A′, B1-B1′, and B2-B2′ of FIG. 3A;

FIG. 4A is a cross-sectional view of a memory cell pillar of an exampleof a memory device according to the inventive concept, and FIG. 4B is anenlarged perspective view of a heating electrode layer of the memorydevice according to the inventive concept;

FIGS. 5, 6, 7, 8 and 9 are cross-sectional views respectivelyillustrating other examples of memory devices according to the inventiveconcept;

FIG. 10A is a perspective view illustrating main components of anotherexample of a memory device according to the inventive concept, and FIG.10B illustrates cross-sectional views of the main components,respectively taken along lines A-A′, B1-B1′, and B2-B2′ of FIG. 10A;

FIG. 11 is a perspective view illustrating a further example of a memorydevice according to the inventive concept;

FIG. 12A is a perspective view illustrating main components of yetanother example of a memory device according to the inventive concept,and FIG. 12B illustrates a cross-sectional view of the main components,taken along line A-A′ of FIG. 12A; and

FIGS. 13A, 13B, 13C, 13D, 13E, 13F, 13G, 13H, 13I, 13J, 13K, 13L, 13M,13N, 13O, 13P, 13Q and 13R are cross-sectional views of a memory deviceduring the course of its manufacture and together illustrate an exampleof a method of fabricating a memory device, according to the inventiveconcept.

DETAILED DESCRIPTION

Hereinafter, the inventive concept will be described in detail withreference to the accompanying drawings. Like components will be denotedby like reference numerals throughout the specification, and repeateddescriptions thereof will be omitted.

FIG. 1 is an equivalent circuit diagram of an example of a memory device10 according to the inventive concept.

Referring to FIG. 1, the memory device 10 includes word lines WL1 andWL2, which extend along a first direction (X direction) and areseparated in a second direction (Y direction) that is perpendicular tothe first direction, and bit lines BL1, BL2, BL3, and BL4, which areseparated from the word lines WL1 and WL2 in a third direction (Zdirection) and extend along the second direction.

The memory device 10 includes a plurality of memory cells MC, which arerespectively arranged at intersection points (in a plan view of thedevice) between the word lines WL1 and WL2 and the bit lines BL1, BL2,BL3, and BL4. Each of the plurality of memory cells MC may include aresistive memory layer RM for storing information and a selection devicelayer SW for selecting a memory cell.

For each of the plurality of memory cells MC, the selection device layerSW may be electrically connected to one of the word lines WL1 and WL2,the resistive memory layer RM may be electrically connected to one ofthe bit lines BL1, BL2, BL3, and BL4, and the resistive memory layer RMand the selection device layer SW may be connected to each other inseries. However, the inventive concept is not limited thereto; rather,the resistive memory layer RM may be connected to a word line, and theselection device layer SW may be connected to a bit line.

To drive the memory device, voltage may be applied to the resistivememory layer RM of each memory cell MC through the word lines WL1 andWL2 and the bit lines BL1, BL2, BL3, and BL4, whereby current may flowthrough the resistive memory layer RM. An arbitrary memory cell MC maybe addressed by performing selection from the word lines WL1 and WL2 andthe bit lines BL1, BL2, BL3, and BL4, and the memory cell MC may beprogrammed by applying a certain signal between the word lines WL1 andWL2 and the bit lines BL1, BL2, BL3, and BL4. In addition, a value ofcurrent may be measured through the bit lines BL1, BL2, BL3, and BL4,whereby information corresponding to a value of resistance of theresistive memory layer RM of the corresponding memory cell MC, that is,programmed information, may be read.

FIGS. 2 to 3B are diagrams illustrating an example of a memory deviceaccording to the inventive concept, and in particular, FIG. 2 is aschematic planar layout diagram illustrating main components of a memorydevice 100, FIG. 3A is a perspective view illustrating the maincomponents of the memory device 100, and FIG. 3B illustratescross-sectional views of the main components, respectively taken alonglines A-A′, B1-B1′, and B2-B2′ of FIG. 3A. The memory device 100 shownin FIGS. 2 to 3B may have the same equivalent circuit configuration asthe memory device 10 shown in FIG. 1.

Referring to FIGS. 2 to 3B, the memory device 100 includes a pluralityof first conductive lines 110 extending parallel to each other over asubstrate 102 in a first direction (X direction), and a plurality ofsecond conductive lines 120 extending parallel to each other in a seconddirection (Y direction) that intersects the first direction. Althoughthe figures illustrate an example in which the first directioncorresponds to an X direction, the second direction corresponds to a Ydirection, and the first direction and the second direction areorthogonal to each other, the inventive concept is not limited thereto.Rather, in other examples the first direction and the second directionintersect and are oblique.

The plurality of first conductive lines 110 may constitute the pluralityof word lines WL1 and WL2 shown in FIG. 1, and the plurality of secondconductive lines 120 may constitute the bit lines BL1, BL2, BL3, andBL4. First insulating patterns 112 may be interposed between the firstconductive lines 110, and second insulating patterns 122 may beinterposed between the second conductive lines 120.

Each of the plurality of first conductive lines 110 and the plurality ofsecond conductive lines 120 may include a metal, a conductive metalnitride, a conductive metal oxide, or combinations thereof. In examplesof the inventive concept, each of the plurality of first conductivelines 110 and the plurality of second conductive lines 120 may includeW, WN, Au, Ag, Cu, Al, TiAlN, Ir, Pt, Pd, Ru, Zr, Rh, Ni, Co, Cr, Sn,Zn, ITO, alloys thereof, or combinations thereof. In other examples ofthe inventive concept, each of the plurality of first conductive lines110 and the plurality of second conductive lines 120 may include a metalfilm and a conductive barrier film covering at least a portion of themetal film. The conductive barrier film may include, for example, Ti,TiN, Ta, TaN, or combinations thereof.

A plurality of memory cells MC may be formed at a plurality ofintersection points between the plurality of first conductive lines 110and the plurality of second conductive lines 120. The plurality ofmemory cells MC may store digital information by resistance changebetween various resistance states including a high resistance state anda low resistance state.

The plurality of memory cells MC may include a plurality of memory cellpillars 140. Insulating walls 150 may each be arranged between thememory cell pillars 140. The plurality of insulating walls 150 include aplurality of first insulating walls 150A and a plurality of secondinsulating walls 150B, which are alternately arranged between theplurality of memory cell pillars 140 in a row along the first direction(X direction), and a plurality of third insulating walls 150C, which arearranged between the plurality of memory cell pillars 140 in a row alongthe second direction (Y direction). Each of the plurality of insulatingwalls 150 extends between adjacent ones of the plurality of memory cellpillars 140 along a direction (Z direction) perpendicular to each of thefirst direction and the second direction.

As shown in FIGS. 3A and 3B, an interlayer dielectric 104 may bedisposed on the substrate 102. The interlayer dielectric 104 mayelectrically isolate the plurality of first conductive lines 110 fromthe substrate 102. The interlayer dielectric 104 may include an oxidefilm, a nitride film, or combinations thereof.

Each of the plurality of memory cell pillars 140 includes a bottomelectrode layer BE, a selection device layer 142, an interfacial layer144, an intermediate electrode layer ME, a heating electrode layer 146,a resistive memory layer 148, and a top electrode layer TE, which arestacked on a first conductive line 110 in this stated order.

Each bottom electrode layer BE, intermediate electrode layer ME, and topelectrode layer TE may include a metal, a conductive metal nitride, aconductive metal oxide, or a combination thereof. For example, each ofthe bottom electrode layer BE, the intermediate electrode layer ME, andthe top electrode layer TE may include TiN, TiSiN, TiCN, TiCSiN, TiAlN,Ta, TaN, W, WN, or a combination thereof. In examples of the inventiveconcept, the bottom electrode layer BE and the top electrode layer TEare omitted. The intermediate electrode layer ME may prevent heat frombeing transferred from the heating electrode layer 146 to the selectiondevice layer 142.

The selection device layer 142 may correspond to the selection devicelayer SW shown in FIG. 1. The selection device layer 142 may include anamorphous chalcogenide switching material. The selection device layer142 may include a material layer capable of having resistance varyingdepending upon amplitudes of voltages applied to both ends of theselection device layer 142. For example, the selection device layer 142may include an ovonic threshold switching (OTS) material.

The selection device layer 142 may include a chalcogenide switchingmaterial as an OTS material. In examples of the inventive concept, theselection device layer 142 may include Si, Te, As, Ge, In, or acombinations thereof. The selection device layer 142 may further includenitrogen (N). According to the inventive concept, the materialconstituting the selection device layer 142 is not limited to OTSmaterials, and the selection device layer 142 may include variousmaterial layers capable of functioning to select a device.

The interfacial layer 144 may be interposed between the selection devicelayer 142 and the intermediate electrode layer ME and protect theselection device layer 142. For example, the interfacial layer 144 maybe may be used as an etch stop layer upon a metal etching process forforming the intermediate electrode layer ME in a process of fabricatingthe memory device 100, thereby preventing the selection device layer 142from being contaminated with undesired metals. The interfacial layer 144may include a non-metallic material, for example, carbon (C), withoutbeing limited thereto. In examples of the inventive concept, theinterfacial layer 144 is omitted.

Although not shown, an additional preliminary interfacial layer may befurther inserted between the plurality of first conductive lines 110 andthe bottom electrode layer BE, and/or between the bottom electrode layerBE and the selection device layer 142. The additional preliminaryinterfacial layer may include the same material as the interfacial layer144.

The heating electrode layer 146 may have an L-shaped cross section in avertical plane oriented in one direction, e.g., in the X-Z plane. Theheating electrode layer 146 includes a base portion 146A (or leg withrespect to its L shape) extending parallel to the plurality of firstconductive lines 110, and a fin portion 146B (or ascender with respectto its L shape) extending from one end of the base portion 146A in adirection away from the plurality of first conductive lines 110.

The heating electrode layer 146 may heat the resistive memory layer 148in a set or reset operation. The heating electrode layer 146 may includea material capable of generating sufficient heat for phase-change of theresistive memory layer 148 while not reacting with the resistive memorylayer 148. In examples of the inventive concept, the heating electrodelayer 146 may include a metal, a metal nitride, an alloy, or acarbon-based conductive material. For example, the heating electrodelayer 146 may include TiN, TiSiN, TiAlN, TaSiN, TaAlN, TaN, WSi, WN,TiW, MoN, NbN, TiBN, ZrSiN, WSiN, WBN, ZrAlN, MoAlN, TiAl, TiON, TiAlON,WON, TaON, C, SiC, SiCN, CN, TiCN, TaCN, or combinations thereof.

In each of the plurality of memory cell pillars 140, a side surface ofthe selection device layer 142, which faces a first insulating wall150A, and a side surface of the fin portion 146B of the heatingelectrode layer 146, which faces the first insulating wall 150A, may beparallel to a first plane, e.g., to the Y-Z plane in FIGS. 3A and 3B.Also, the side surface of the selection device layer 142, which facesthe first insulating wall 150A, and the side surface of the fin portion146B, which faces the first insulating wall 150A, may be aligned along afirst straight line L1 coincident with the first plane, i.e., may bevertically coplanar.

In examples of the inventive concept, the intermediate electrode layerME of each of the plurality of memory cell pillars 140 may have a sidesurface, which faces the first insulating wall 150A and extends parallelto the first plane. A side surface of the intermediate electrode layerME, which faces the first insulating wall 150A, may extend along thefirst straight line L1 together with the side surface of the selectiondevice layer 142, which faces the first insulating wall 150A, and theside surface of the fin portion 146B, which faces the first insulatingwall 150A.

In examples of the inventive concept, at least one of the interfaciallayer 144 and the bottom electrode layer BE may have a side surfacefacing the first insulating wall 150A and extending along the firststraight line L1.

The resistive memory layer 148 has a bottom surface contacting a topsurface 146T that is farthest in the fin portion 146B of the heatingelectrode layer 146 from a first conductive line 110. The resistivememory layer 148 may correspond to the resistive memory layer RM shownin FIG. 1.

The resistive memory layer 148 may include a phase-change material,which reversibly changes between an amorphous state and a crystallinestate depending upon heating time. For example, the resistive memorylayer 148 may include a material capable of having a reversible changein phase due to Joule's heat generated by a voltage applied to both endsof the resistive memory layer 148 and having a change in resistance dueto such phase change.

In examples of the inventive concept, the resistive memory layer 148 mayinclude a chalcogenide material as the phase-change material. Inexamples of the inventive concept, the resistive memory layer 148 mayinclude Ge—Sb—Te (GST). For example, the resistive memory layer 148 mayinclude a material such as Ge₂Sb₂Te₅, Ge₂Sb₂Te₇, Ge₁Sb₂Te₄, orGe₁Sb₄Te₇. The resistive memory layer 148 may include variouschalcogenide materials other than Ge—Sb—Te set forth above. For example,the resistive memory layer 148 may include, as the chalcogenidematerial, a material including at least two elements selected from amongSi, Ge, Sb, Te, Bi, In, Sn, and Se. In examples of the inventiveconcept, the resistive memory layer 148 may further include at least oneimpurity selected from among B, C, N, O, P, and S. The at least oneimpurity may change a driving current of the memory device 100. Inaddition, the resistive memory layer 148 may further include a metal.For example, the resistive memory layer 148 may include at least onemetal selected from among Al, Ga, Zn, Ti, Cr, Mn, Fe, Co, Ni, Mo, Ru,Pd, Hf, Ta, Ir, Pt, Zr, Tl, Pd, and Po.

The resistive memory layer 148 may have a multilayered structure, inwhich two or more layers having different properties are stacked. Thenumber or thicknesses of a plurality of layers constituting themultilayered structure may be freely selected. In examples of theinventive concept, the resistive memory layer 148 may have asuperlattice structure in which layers of different materials arealternately stacked.

The material constituting the resistive memory layer 148 is not limitedto phase-change materials. The resistive memory layer 148 may includevarious materials having resistance-change properties. In examples ofthe inventive concept, the resistive memory layer 148 may include atransition metal oxide, and in this case, the memory device 100 mayconstitute a resistive RAM (ReRAM) device. In other examples of theinventive concept, the resistive memory layer 148 may have a magnetictunnel junction (MJT) structure, which includes: two electrodesincluding magnetic substances; and a dielectric between the two magneticsubstance electrodes, and in this case, the memory device 100 mayconstitute a magnetic RAM (MRAM) device.

FIG. 4A is an enlarged cross-sectional view of an area marked by adashed line PX of FIG. 3B. FIG. 4B is an enlarged perspective view ofthe heating electrode layer 146.

Referring to FIGS. 4A and 4B, each of the plurality of memory cellpillars 140 further includes a first insulating spacer SPA1 filling areentrant corner portion CN, which is defined by the base portion 146Aand the fin portion 146B of the heating electrode layer 146. The firstinsulating spacer SPA1 contacts the bottom surface of the resistivememory layer 148. The area of a first section of the bottom surface ofthe resistive memory layer 148, which contacts the top surface 146T ofthe fin portion 146B of the heating electrode layer 146, may be lessthan the area of a second section of the bottom surface of the resistivememory layer 148, which contacts the first insulating spacer SPA1.

The resistive memory layer 148 may have a side surface, which faces thefirst insulating wall 150A and extends from the fin portion 146B towarda second conductive line 120 in a direction parallel to the firststraight line L1. The top surface 146T of the fin portion 146B and a topsurface T1 of the first insulating spacer SPA1, which faces theresistive memory layer 148, may be coplanar. Thus, a distance P1 fromthe first conductive line 110 to the top surface 146T of the fin portion146B may be substantially the same as a distance S1 from the firstconductive line 110 to the top surface T1 of the first insulating spacerSPA1. The bottom surface of the resistive memory layer 148 may be flat,i.e., may be planar, and may contact the top surfaces 146T/T1 of the finportion 146B and first insulating spacer SPA1. That is, the resistivememory layer 148 and the heating electrode layer 146/first insulatingspacer SPA1 may have an interface at the bottom of the resistive memorylayer 148 and the tops of the heating electrode layer 146 and firstinsulating spacer SPA1.

The examples of the memory device 100 according to the inventiveconcept, which have been described with reference to FIGS. 2 to 4B,include the heating electrode layer 146 having an L-shaped crosssection. The fin portion 146B of the heating electrode layer 146 maycontact the bottom surface of the resistive memory layer 148 and have anextremely smaller contact area than the area of the bottom surface ofthe resistive memory layer 148. Thus, when a current is applied from theintermediate electrode layer ME to the top electrode layer TE throughthe heating electrode layer 146, the contact area between the finportion 146B of the heating electrode layer 146 and the resistive memorylayer 148 may be minimal, thereby improving heating efficiency.Therefore, even if the components of the memory device having across-point stack structure according to the inventive concept are/havebeen scaled down due to the demand for high integration, the memorydevice offers high heating efficiency upon a switching operation andthus is highly reliable.

FIGS. 5 to 9 are cross-sectional views respectively illustrating otherexamples of memory devices according to the inventive concept. In FIGS.5 to 9, the same reference numerals as in FIGS. 1 to 4B denote the samemembers, and descriptions thereof will be omitted.

A memory device 200 shown in FIG. 5 has substantially the sameconfiguration as the memory device 100 described with reference to FIGS.2 to 4B. However, a memory cell pillar 240 of the memory device 200includes a heating electrode layer 246, which includes a base portion246A and a fin portion 246B and has an L-shaped cross section.

In the memory cell pillar 240, a distance P2 from the first conductiveline 110 to a top surface 246T of the fin portion 246B of the heatingelectrode layer 246 is less than a distance S2 from the first conductiveline 110 to a top surface T2 of a first insulating spacer SPA2. Thememory cell pillar 240 of the memory device 200 includes a resistivememory layer 248 having a protrusion 248P at a bottom surface thereof.In the bottom of the resistive memory layer 248, a step STA provided bya side surface of the protrusion 248P is formed between a first sectionof the bottom surface facing the top surface 246T and a second sectionof the bottom surface facing the first insulating spacer SPA2. Theprotrusion 248P of the resistive memory layer 248 is between the firstinsulating wall 150A and the first insulating spacer SPA2, and protrudestoward the first conductive line 110 to contact the top surface 246T ofthe fin portion 246B.

The heating electrode layer 246, the first insulating spacer SPA2, andthe resistive memory layer 248 are substantially the same as the heatingelectrode layer 146, the first insulating spacer SPA1, and the resistivememory layer 148 described with reference to FIGS. 2 to 4B.

A memory device 300 shown in FIG. 6 has substantially the sameconfiguration as the memory device 100 described with reference to FIGS.2 to 4B. However, a memory cell pillar 340 of the memory device 300includes a heating electrode layer 346, which includes a base portion346A and a fin portion 346B and has an L-shaped cross-section.

In the memory device 300, a distance P3 from the first conductive line110 to a top surface 346T of the fin portion 346B is greater than adistance S3 from the first conductive line 110 to a top surface T3 of afirst insulating spacer SPA3. A bottom surface of a resistive memorylayer 348 includes a step STB between a first section of the bottomsurface facing the top surface 346T and a second section of the bottomsurface facing the first insulating spacer SPA3. A resistive memorylayer 348 includes a protrusion 348P, which is between a secondinsulating wall 150B and the first insulating spacer SPA3 and protrudestoward the first conductive line 110 to contact the top surface T3 ofthe first insulating spacer SPA3.

The heating electrode layer 346, the first insulating spacer SPA3, andthe resistive memory layer 348 are substantially the same the heatingelectrode layer 146, the first insulating spacer SPA1, and the resistivememory layer 148 described with reference to FIGS. 2 to 4B.

A memory device 400 shown in FIG. 7 has substantially the sameconfiguration as the memory device 100 described with reference to FIGS.2 to 4B. However, a memory cell pillar 440 of the memory device 400includes a resistive memory layer 448 having an inclined side surfaceand a top electrode layer TE4 having an inclined side surface.

In more detail, in the memory device 400, each of the resistive memorylayer 448 and the top electrode layer TE4 has inclined side surfacesrespectively facing the first insulating wall 150A and the secondinsulating wall 150B. The inclined side surface of the resistive memorylayer 448 may extend from the fin portion 146B of the heating electrodelayer 146 toward the top electrode layer TE4 along a second straightline L2 that is not parallel to the first straight line L1. The inclinedside surface of the top electrode layer TE4 may extend from theresistive memory layer 448 toward the second conductive line 120 alongthe second straight line L2. Each of the resistive memory layer 448 andthe top electrode layer TE4 may have an increasing width in the firstdirection (X direction) and/or in the second direction (Y direction)with decreasing distance from the second conductive line 120. Inexamples of the inventive concept, each of the resistive memory layer448 and the top electrode layer TE4 may have a reverse truncated pyramidshape.

Note, in the present disclosure, the “bottom surface” of the resistivememory layer 148, 248, 348, 448, for example, may therefore refer to anydownwardly facing surfaces or downwardly facing sections of a surface.

Descriptions of the resistive memory layer 448 and the top electrodelayer TE4 are substantially the same as described as to the resistivememory layer 148 and the top electrode layer TE with reference to FIGS.2 to 4B.

A memory device 500 shown in FIG. 8 has substantially the sameconfiguration as the memory device 100 described with reference to FIGS.2 to 4B. However, a memory cell pillar 540 of the memory device 500includes a second insulating spacer SPB between the top surface 146T ofthe fin portion 146B of the heating electrode layer 146 and the secondconductive line 120, the second insulating spacer SPB having a ringshape surrounding the resistive memory layer 148 and a top electrodelayer TE5. The top electrode layer TE5 may have increasing widths in thefirst direction (X direction) and in the second direction (Y direction)with decreasing distance from the second conductive line 120.

In the memory device 500, a first insulating wall 550A includes a flatside surface AS1, which contacts the fin portion 146B of the heatingelectrode layer 146 and extends along the first straight line L1, and arecessed side surface AS2, which faces the resistive memory layer 148and the top electrode layer TE5 and is recessed in a direction away fromthe resistive memory layer 148 and the top electrode layer TE5. Like thefirst insulating wall 550A, a second insulating wall 550B may include aflat side surface AS3, which contacts the first insulating spacer SPA1and extends along a straight line parallel to the first straight lineL1, and a recessed side surface AS4, which faces the resistive memorylayer 148 and the top electrode layer TE5 and is recessed in a directionaway from the resistive memory layer 148 and the top electrode layerTE5.

The second insulating spacer SPB may cover the resistive memory layer148 and the recessed side surfaces AS2 and AS4. In examples of theinventive concept, the second insulating spacer SPB may include an oxidefilm, a nitride film, an oxynitride film, or combinations thereof.

The first insulating wall 550A, the second insulating wall 550B, and thetop electrode layer TE5 are substantially the same as the firstinsulating wall 150A, the second insulating wall 150B, and the topelectrode layer TE described with reference to FIGS. 2 to 4B.

A memory device 600 shown in FIG. 9 has substantially the sameconfiguration as the memory device 100 described with reference to FIGS.2 to 4B. However, the memory device 600 includes a plurality of memorycell pillars 640 having inclined side surfaces, and third insulatingwalls 650C having inclined side surfaces.

In the memory device 600, among a plurality of insulating walls 650, aplurality of third insulating walls 650C may have inclined sidesurfaces. In more detail, both side surfaces of each third insulatingwall 650C may be inclined with respect to a straight line that extendsalong the third direction (Z direction) perpendicular to each of thefirst direction (X direction) and the second direction (Y direction).The memory cell pillars 640 have inclined side surfaces facing the thirdinsulating walls 650C. Thus, a side surface of a heating electrode layer646, which faces each third insulating wall 650C, and a side surface ofa first insulating spacer SPA6, which faces the third insulating wall650C, may extend parallel to an inclined side surface of the thirdinsulating wall 650C. In examples of the inventive concept, each thirdinsulating wall 650C may have an increasing width in the seconddirection (Y direction) as the third insulating layer 650C gets closerto the second conductive line 120 from the first conductive line 110.

The heating electrode layer 646 may include a base portion 646A (or legwith reference to the L-shaped cross section thereof) and a fin portion646B (or ascender). As shown in a cross-sectional view taken along aline B2-B2′ of FIG. 9, the fin portion 646B of the heating electrodelayer 646 may have a decreasing width in the second direction (Ydirection) as the fin portion 646B gets closer to the second conductiveline 120 from the first conductive line 110.

The heating electrode layer 646, the first insulating spacer SPA6, andthe third insulating walls 650C are substantially the same as to theheating electrode layer 146, the first insulating spacer SPA1, and thethird insulating walls 150C described with reference to FIGS. 2 to 4B.

FIGS. 10A and 10B are diagrams illustrating another example of a memorydevice according to of the inventive concept, and in particular, FIG.10A is a perspective view illustrating main components of a memorydevice 700, and FIG. 10B illustrates cross-sectional views of the maincomponents, respectively taken along lines A-A′, B1-B1′, and B2-B2′ ofFIG. 10A. In FIGS. 10A and 10B, the same reference numerals as in FIGS.3A and 3B denote the same members, and descriptions thereof will beomitted.

Referring to FIGS. 10A and 10B, the memory device 700 may include aplurality of lower word lines 710 extending parallel to each other overthe substrate 102 in the first direction (X direction), a plurality ofcommon bit lines 720 extending parallel to each other in the seconddirection (Y direction), and a plurality of top word lines 730 extendingparallel to each other in the first direction (X direction). Theplurality of bottom word lines 710 and the plurality of common bit lines720 may correspond to the plurality of first conductive lines 110 andthe plurality of second conductive lines 120, which are shown in FIGS.3A and 3B.

First memory cells MC1 may be respectively arranged at a plurality ofintersection points between the plurality of bottom word lines 710 andthe plurality of common bit lines 720. Second memory cells MC2 may berespectively arranged at a plurality of intersection points between theplurality of common bit lines 720 and the plurality of top word lines730.

Similarly to the memory cell MC described with reference to FIGS. 3A and3B, each of the plurality of first memory cells MC1 and the plurality ofsecond memory cells MC2 may include a memory cell pillar 140. Theplurality of first memory cells MC1 and the plurality of second memorycells MC2 may be insulated from each other by the plurality ofinsulating walls 150.

FIG. 11 is a perspective view illustrating a further example of a memorydevice according to the inventive concept.

Referring to FIG. 11, a memory device 800 has substantially the sameconfiguration as the memory device 700 described with reference to FIGS.10A to 10B. However, in the memory device 800, the memory cell pillars140 constituting the plurality of first memory cells MC1 and the memorycell pillars 140 constituting the plurality of second memory cells MC2may be congruent with each other as a whole, i.e., may be rotated by 90°with respect to each other.

The angle of offset of the memory cell pillars 140 constituting theplurality of second memory cells MC2 with respect to the memory cellpillars 140 constituting the plurality of first memory cells MC1 is notlimited to the example shown in FIG. 11, and may be different than 90°as the need arises.

Although FIGS. 10A, 10B, and 11 show that each of the plurality of firstmemory cells MC1 and the plurality of second memory cells MC2 includes amemory cell pillar 140 of the type illustrated in FIGS. 3A and 3B, theinventive concept is not limited thereto. For example, each of theplurality of first memory cells MC1 and the plurality of second memorycells MC2 may have a memory cell pillar structure selected from amongthe memory cell pillars 240, 340, 440, 540, and 640 and structuresmodified and changed therefrom without departing from the spirit andscope of the inventive concept.

FIGS. 12A and 12B are diagrams illustrating yet another example of amemory device according to of the inventive concept, and in particular,FIG. 12A is a perspective view illustrating main components of a memorydevice 900, and FIG. 12B illustrates a cross-sectional view of the maincomponents, taken along a line A-A′ of FIG. 12A. In FIGS. 12A and 12B,the same reference numerals as in FIGS. 3A and 3B denote the samemembers, and descriptions thereof will be omitted.

Referring to FIGS. 12A and 12B, the memory device 900 includes a drivingcircuit area 910 on the substrate 102 and has a cell-on-peri (COP)structure, in which memory cells are arranged over the driving circuitarea 910.

In more detail, the memory device 900 includes the driving circuit area910 at a first level over the substrate 102, and the plurality of firstmemory cells MC1 and the plurality of second memory cells MC2, which areat higher levels than the first level over the substrate 102. As usedherein, the term “level” refers to a location along a vertical direction(Z direction) from the substrate 102.

The driving circuit area 910 may be an area in which peripheral circuitsor driving circuits for driving the plurality of first memory cells MC1and the plurality of second memory cells MC2 are arranged. Theperipheral circuits arranged in the driving circuit area 910 may becircuits capable of processing data at high speed, the data beinginput/output to drive the plurality of first memory cells MC1 and theplurality of second memory cells MC2. In examples of the inventiveconcept, the peripheral circuits may include a page buffer, a latchcircuit, a cache circuit, a column decoder, a sense amplifier, a datain/out circuit, a row decoder, or the like.

As shown in FIG. 12B, an active region AC may be defined in thesubstrate 102 by a device isolation film 103. A plurality of transistorsTR constituting the driving circuit area 910 may be formed on the activeregion AC of the substrate 102. Each of the plurality of transistors TRmay include a gate G, a gate insulating film GD, and a source/drainregion SD. An insulating spacer 906 may cover both side surfaces of thegate G, and an etch stop film 908 may be formed on the gate G and theinsulating spacer 906. The etch stop film 908 may include an insulatingmaterial such as silicon nitride, silicon oxynitride, or the like.Interlayer dielectrics 912A, 912B, and 912C may be stacked on the etchstop film 908 in this stated order. The interlayer dielectrics 912A,912B, and 912C may include silicon oxide, silicon oxynitride, or thelike.

The driving circuit area 910 includes a multilayer wiring structure 914electrically connected to the plurality of transistors TR. Elements ofthe multilayered wiring structure 914 may be insulated from each otherby the plurality of interlayer dielectrics 912A, 912B, and 912C. Themultilayer wiring structure 914 may include a first contact 916A, afirst wiring layer 918A, a second contact 916B, and a second wiringlayer 918B, which are stacked over the substrate 102 in this statedorder and electrically connected to each other. Each of the first wiringlayer 918A and the second wiring layer 918B may include a metal, aconductive metal nitride, a metal silicide, or combinations thereof.Although the multilayer wiring structure 914 is shown in FIGS. 12A and12B as being a double-layer wiring structure including the first wiringlayer 918A and the second wiring layer 918B, the inventive concept isnot limited thereto. For example, the multilayer wiring structure 914may include three or more layers depending upon layouts of the drivingcircuit area 910 and kinds and arrangements of gates G.

The interlayer dielectric 104 may be formed on the plurality ofinterlayer dielectrics 912A, 912B, and 912C. Although not shown, awiring structure connecting the plurality of first memory cells MC1 andthe plurality of second memory cells MC2 to the driving circuit area 910may extend through the interlayer dielectric 104.

In the memory device 900, because the plurality of first memory cellsMC1 and the plurality of second memory cells MC2 are arranged over thedriving circuit area 910, the degree of integration of the memory device900 may be relatively great.

Next, an example of a method of fabricating a memory device, accordingto the inventive concept, will be described in detail.

FIGS. 13A to 13R are cross-sectional views illustrating sequentialprocesses of an exemplary method of fabricating a memory device,according to the inventive concept. The method will be described withrespect to the fabricating of a memory device of the type shown in FIGS.3A and 3B. As in FIG. 3B, FIGS. 13A to 13R are cross-sectional views ofmain components, which correspond to cross sections respectively takenalong lines A-A′, B1-B1′, and B2-B2′ of FIG. 3A. In FIGS. 13A to 13R,the same reference numerals as in FIGS. 3A and 3B denote the samemembers, and descriptions thereof will be omitted.

Referring to FIG. 13A, the interlayer dielectric 104 is formed on thesubstrate 102, and the plurality of first conductive lines 110 and theplurality of first insulating patterns 112 are formed on the interlayerdielectric 104, the plurality of first insulating patterns 112insulating the first conductive lines 110 from each other.

Referring to FIG. 13B, a preliminary bottom electrode layer PBE, apreliminary selection device layer P142, a preliminary interfacial layerP144, and a preliminary intermediate electrode layer PME are formed onthe plurality of first conductive lines 110 and the plurality of firstinsulating patterns 112 in this stated order, and a protectiveinsulating film 172 and a first mask pattern 174 are formed on thepreliminary intermediate electrode layer PME.

The first mask pattern 174 may include a plurality of line patterns,which each have a first width W1 in the first direction (X direction)and are separated from each other by a first gap G1. In examples of theinventive concept, the first width W1 may be equal in size to the firstgap G1, without being limited thereto.

The preliminary bottom electrode layer PBE, the preliminary selectiondevice layer P142, the preliminary interfacial layer P144, and thepreliminary intermediate electrode layer PME may respectively includematerials constituting the bottom electrode layer BE, the selectiondevice layer 142, the interfacial layer 144, and the intermediateelectrode layer ME, which are shown in FIGS. 3A and 3B.

In examples of the inventive concept, the protective insulating film 172and the first mask pattern 174 may include different material filmsselected from among an oxide film, a nitride film, a polysilicon film,and a carbon-containing film. For example, the protective insulatingfilm 172 may include a silicon nitride film, and the first mask pattern174 may include a silicon oxide film.

Although not shown, an additional preliminary interfacial layer may beformed so as to be interposed between the plurality of first conductivelines 110 and the plurality of first insulating patterns 112 and thepreliminary bottom electrode layer PBE, and/or between the preliminarybottom electrode layer PBE and the preliminary selection device layerP142. The additional preliminary interfacial layer may be of the samematerial as the preliminary interfacial layer P144.

Referring to FIG. 13C, a spacer layer 176 is formed and conformallycovers exposed surfaces of the protective insulating film 172 and thefirst mask pattern 174. The spacer layer 176 may include a material thatis the same as or has similar etching properties to a material of thefirst mask pattern 174. For example, the spacer layer 176 may include asilicon oxide film.

Referring to FIG. 13D, a plurality of spacers 176A are formed byperforming an etch-back of the spacer layer 176, the plurality ofspacers 176A covering both side surfaces of the first mask pattern 174.The protective insulating film 172 may be exposed by the plurality ofspacers 176A.

Referring to FIG. 13E, the protective insulating film 172, thepreliminary intermediate electrode layer PME, the preliminaryinterfacial layer P144, the preliminary selection device layer P142, andthe preliminary bottom electrode layer PBE are etched by using the firstmask pattern 174 and the plurality of spacers 176A as an etch mask,thereby forming a plurality of first line spaces LS1, which expose theplurality of first conductive lines 110 and the plurality of firstinsulating patterns 112.

The plurality of first line spaces LS1 may extend through the protectiveinsulating film 172, the preliminary intermediate electrode layer PME,the preliminary interfacial layer P144, the preliminary selection devicelayer P142, and the preliminary bottom electrode layer PBE. Theplurality of first line spaces LS1 may each have a second width G2 thatis less than the first gap G1 (see FIG. 13B) in the first direction (Xdirection).

In the process of etching the preliminary intermediate electrode layerPME by using the first mask pattern 174 and the plurality of spacers176A as an etch mask, the preliminary interfacial layer P144 may serveas an etch stop layer. During the etching of the preliminaryintermediate electrode layer PME, the preliminary selection device layerP142 is covered with the preliminary interfacial layer P144 and thus maynot be exposed outside thereof. Thus, during the etching of thepreliminary intermediate electrode layer PME, the preliminaryinterfacial layer P144 may protect the preliminary selection devicelayer P142 from being contaminated with metals derived from thepreliminary intermediate electrode layer PME.

Referring to FIG. 13F, the first insulating walls 150A are formed on theresultant product illustrated by FIG. 13E. The plurality of firstinsulating walls 150A fills the plurality of first line spaces LS1.

Each of the plurality of first insulating walls 150A may have a lineshape extending in the second direction (Y direction) through thepreliminary intermediate electrode layer PME, the preliminaryinterfacial layer P144, the preliminary selection device layer P142, andthe preliminary bottom electrode layer PBE. The plurality of firstinsulating walls 150A may have planarized top surfaces extending at thesame level as a top surface of the first mask pattern 174. In examplesof the inventive concept, the plurality of first insulating walls 150Amay include a material that is the same as or has similar etchingproperties to a material of the protective insulating film 172. Forexample, the plurality of first insulating walls 150A may include asilicon nitride film.

Referring to FIG. 13G, the protective insulating film 172 is exposed bythe plurality of first insulating walls 150A by removing the first maskpattern 174 and the plurality of spacers 176A, followed by exposing thepreliminary bottom electrode layer PBE by removing the protectiveinsulating film 172. During the removing of the protective insulatingfilm 172, heights of the plurality of first insulating walls 150A may bereduced. Each of the plurality of first insulating walls 150A mayinclude a protrusion protruding upwards from the preliminaryintermediate electrode layer PME.

Referring to FIG. 13H, a preliminary heating electrode layer P146 and apreliminary first insulating spacer PSPA1 are formed and cover exposedsurfaces of the preliminary intermediate electrode layer PME and exposedsurfaces of the plurality of first insulating walls 150A.

Each of the preliminary heating electrode layer P146 and the preliminaryfirst insulating spacer PSPA1 may be formed in a liner shape conformallycovering the exposed surfaces of the preliminary intermediate electrodelayer PME and the exposed surfaces of the plurality of first insulatingwalls 150A. After the preliminary first insulating spacer PSPA1 isformed, each recess RS may be formed over a top surface of thepreliminary first insulating spacer PSPA1 between two of the pluralityof first insulating walls 150A. The preliminary heating electrode layerP146 and the preliminary first insulating spacer PSPA1 may respectivelyinclude materials constituting the heating electrode layer 146 and thefirst insulating spacer SPA1, which are shown in FIGS. 3A and 3B.

Referring to FIG. 13I, the preliminary first insulating spacer PSPA1 andthe preliminary heating electrode layer P146 undergo etch-back, therebyleaving only portions of the preliminary heating electrode layer P146and the preliminary first insulating spacer PSPA1, which areself-aligned with and cover both side surfaces of the respective firstinsulating walls 150A.

Referring to FIG. 13J, the preliminary intermediate electrode layer PME,the preliminary interfacial layer P144, preliminary selection devicelayer P142, and the preliminary bottom electrode layer PBE are etched byusing the plurality of first insulating walls 150A, the preliminaryfirst insulating spacer PSPA1, and the preliminary heating electrodelayer P146 as an etch mask, thereby forming a plurality of second linespaces LS2, which expose the plurality of first conductive lines 110 andthe plurality of first insulating patterns 112 as open to the recessesRS.

The plurality of second line spaces LS2 may extend through thepreliminary intermediate electrode layer PME, the preliminaryinterfacial layer P144, the preliminary selection device layer P142, andthe preliminary bottom electrode layer PBE. The second line spaces LS2may each have a third width G3 in the first direction (X direction). Thethird width G3 may be approximately equal to the second width G2 (seeFIG. 13E).

In the process of etching the preliminary intermediate electrode layerPME by using the plurality of first insulating walls 150A, thepreliminary first insulating spacer PSPA1, and the preliminary heatingelectrode layer P146 as an etch mask, the preliminary interfacial layerP144 may serve as an etch stop layer. During the etching of thepreliminary intermediate electrode layer PME, the preliminary selectiondevice layer P142 is covered with the preliminary interfacial layer P144and thus may not be exposed. Thus, during the etching of the preliminaryintermediate electrode layer PME, the preliminary interfacial layer P144may protect the preliminary selection device layer P142 from beingcontaminated with metals derived from the preliminary intermediateelectrode layer PME.

Referring to FIG. 13K, the plurality of second insulating walls 150B areformed on the resultant product illustrated by FIG. 13J and fill theplurality of second line spaces LS2 and the plurality of recesses RS.

The plurality of second insulating walls 150B may extend parallel to theplurality of first insulating walls 150A and have planarized topsurfaces extending at the same level as the top surfaces of theplurality of first insulating walls 150A. The second insulating walls150B and the first insulating walls 150A may be alternately arrangedalong the first direction (X direction). In examples of the inventiveconcept, the plurality of second insulating walls 150B may include thesame material as the plurality of first insulating walls 150A. Forexample, the plurality of second insulating walls 150B may include asilicon nitride film.

Referring to FIG. 13L, a second mask pattern 180 is formed on thepreliminary heating electrode layer P146, the preliminary firstinsulating spacer PSPA1, the plurality of first insulating walls 150A,and the plurality of second insulating walls 150B. The second maskpattern 180 may include a plurality of line patterns extending in thefirst direction (X direction). The second mask pattern 180 may include amaterial that is the same as or has similar etching properties tomaterials of the plurality of first insulating walls 150A and theplurality of second insulating walls 150B. For example, the second maskpattern 180 may include a silicon nitride film.

Referring to FIG. 13M, the preliminary first insulating spacer PSPA1,the preliminary intermediate electrode layer PME, the preliminaryinterfacial layer P144, the preliminary selection device layer P142, andthe preliminary bottom electrode layer PBE are etched by using thesecond mask pattern 180 as an etch mask, thereby forming a plurality ofstack structures each including the bottom electrode layer BE, theselection device layer 142, the interfacial layer 144, and theintermediate electrode layer ME. A plurality of holes HS are definedbetween the stack structures and expose the plurality of firstinsulating patterns 112.

In the process of etching the preliminary intermediate electrode layerPME by using the second mask pattern 180 as an etch mask, thepreliminary interfacial layer P144 may serve as an etch stop layer.During the etching of the preliminary intermediate electrode layer PME,the preliminary selection device layer P142 is covered with thepreliminary interfacial layer P144 and thus may not be exposed. Thus,during the etching of the preliminary intermediate electrode layer PME,the preliminary interfacial layer P144 may protect the preliminaryselection device layer P142 from being contaminated with metals derivedfrom the preliminary intermediate electrode layer PME.

Referring to FIG. 13N, a filling insulating film is formed to athickness great enough to fill the plurality of holes HS in theresultant product illustrated by FIG. 13M, followed by planarizing theresultant product illustrated by FIG. 13M such that a top portion of thefilling insulating film and the second mask pattern 180 are removed,thereby leaving a plurality of first to third insulating walls 150A,150B, and 150C, which have planarized top surfaces. During theplanarizing of the resultant product illustrated by FIG. 13M, heights ofthe preliminary heating electrode layer P146 and the preliminary firstinsulating spacer PSPA1 may be reduced. A plurality of third insulatingwalls 150C remain in the plurality of holes HS, the plurality of thirdinsulating walls 150C being portions of the filling insulating film. Theplurality of first to third insulating walls 150A, 150B, and 150C, aplurality of preliminary heating electrode layers P146, and a pluralityof preliminary first insulating spacers PSPA1 may have top surfaces atan approximately equal level.

Referring to FIG. 13O, in the resultant product illustrated by FIG. 13N,the plurality of preliminary heating electrode layers P146 and theplurality of preliminary first insulating spacers PSPA1 are removed,beginning at exposed surfaces thereof, up to a certain thickness byusing the etch selectivity of preliminary heating electrode layers P146and the plurality of preliminary first insulating spacers PSPA1 withrespect to the plurality of first to third insulating walls 150A, 150B,and 150C, thereby forming a plurality of heating electrode layers 146and a plurality of first insulating spacers SPA1 simultaneously withforming a plurality of damascene holes DH, which expose the plurality ofheating electrode layers 146 and the plurality of first insulatingspacers SPA1. The (first-direction (X direction) widths andsecond-direction (Y direction) widths of the plurality of) damasceneholes DH may be defined by the first to third insulating walls 150A,150B, and 150C.

In examples of the inventive concept, a wet etching process may be usedto remove certain thicknesses of the plurality of preliminary heatingelectrode layers P146 and the plurality of preliminary first insulatingspacers PSPA1. For example, when the preliminary heating electrodelayers P146 include TiSiN, an etching solution such as SPM (sulfuricperoxide mixture), SC1 (mixture of NH₄OH, H₂O₂, and H₂O), or H₂O₂ may beused to remove portions of the plurality of preliminary heatingelectrode layers P146. When the plurality of preliminary firstinsulating spacers PSPA1 is constituted by a silicon oxide film, an HFetching solution may be used to remove portions of the plurality ofpreliminary first insulating spacers PSPA1. However, the inventiveconcept is not limited thereto; rather, certain thicknesses of theplurality of preliminary heating electrode layers P146 and the pluralityof preliminary first insulating spacers PSPA1 may be removed by variouswet etching processes, various dry etching processes, or combinationsthereof, which may individually or collectively be referred to as “anetch process” or simply as “etching”.

In the method of fabricating the memory device 100 according to theinventive concept, to form the plurality of heating electrode layers146, a self-alignment using side surfaces of the plurality of firstinsulating walls 150A is employed, as described with reference to FIGS.13H to 13O. Thus, even though components like the plurality of heatingelectrode layers 146 constituting the memory device 100 are scaled downto meet the demand for high integration, the components may be formed atrelatively low costs by a simplified process, and a structure in whichthe plurality of heating electrode layers 146 have small criticaldimensions (CDs) to provide desired heating efficiency may be easilyobtained.

Referring to FIG. 13P, resistive memory layers 148 are formed andrespectively partially fill the damascene holes DH.

To form the plurality of resistive memory layers 148, a damasceneprocess may be used. For example, a resistive material layer thickenough to fill the plurality of damascene holes DH may be formed,followed by performing etch-back of the resistive material layer,thereby leaving the plurality of resistive memory layers 148 only inlower partial spaces in the plurality of damascene holes DH. After theresistive memory layers 148 are formed, upper partial spaces in theplurality of damascene holes DH may remain.

Because the resistive memory layers 148 are formed by the damasceneprocess, there is no concern that side surfaces of each of the pluralityof resistive memory layers 148 are damaged by an etching process duringthe process of forming the plurality of resistive memory layers 148.Thus, the deterioration of the plurality of resistive memory layers 148may be prevented.

Referring to FIG. 13Q, top electrode layers TE are formed, the pluralityof top electrode layers TE filling the upper partial spaces in theplurality of damascene holes DH and covering the plurality of resistivememory layers 148.

To form the plurality of top electrode layers TE, a damascene processmay be used. For example, a conductive material layer thick enough tofill the plurality of damascene holes DH may be formed on the pluralityof resistive memory layers 148, followed by performing etch-back of theconductive material layer, thereby leaving the plurality of topelectrode layers TE only in the upper partial spaces of the plurality ofdamascene holes DH. The top electrode layers TE may have top surfacesthat are at an approximately equal level to top surfaces of the first tothird insulating walls 150A, 150B, and 150C.

Referring to FIG. 13R, the plurality of second conductive lines 120 andthe plurality of second insulating patterns 122 may be formed on theresultant product including the plurality of top electrode layers TE,thereby completing the forming of the memory device 100.

According to the method of fabricating the memory device 100, which hasbeen described with reference to FIGS. 13A to 13R, to form the pluralityof memory cell pillars 140 constituting the plurality of memory cellsMC, a process of performing self-alignment using the side surfaces ofthe plurality of first insulating walls 150A is employed. Thus, thememory cell pillars 140 having fine CDs may be formed at relatively lowcosts by a simplified process to meet the demand for high integrationwithout sacrificing reliability or incurring excessive manufacturingcosts.

Heretofore, although the method of fabricating the memory device 100shown in FIGS. 3A and 3B has been described with reference to FIGS. 13Ato 13R, the memory devices 200, 300, 400, 500, 600, 700, 800, and 900shown in FIGS. 5 to 12B or memory devices having various structuressimilar thereto may be fabricated by using the processes described withreference to FIGS. 13A to 13R or using various methods modified andchanged therefrom without departing from the spirit and scope of theinventive concept.

To fabricate the memory devices 200 and 300 shown in FIGS. 5 and 6, inthe process of forming the plurality of damascene holes DH by partiallyremoving the plurality of preliminary heating electrode layers P146 andthe plurality of preliminary first insulating spacers PSPA1 as describedwith reference to FIG. 13O, necessary amounts of the plurality ofpreliminary heating electrode layers P146 and of the plurality ofpreliminary first insulating spacers PSPA1 may be etched away, therebyforming the damascene holes DH having desired cross-sectional shapes.After that, the processes described with reference to FIGS. 13P to 13Rmay be performed.

To fabricate the memory device 400 shown in FIG. 7, the plurality ofdamascene holes DH may be formed as described with reference to FIG.13O, followed by removing upper portions of the plurality of first tothird insulating walls 150A, 150B, and 150C, which define side surfacesof the plurality of damascene holes DH, thereby forming the plurality ofdamascene holes DH having inclined inner side surfaces along the secondstraight line L2 shown in FIG. 7. After that, the resistive memory layer448 and the top electrode layer TE4, which have inclined side surfaces,may be formed in each of the plurality of damascene holes DH.

To fabricate the memory device 500 shown in FIG. 8, the plurality ofdamascene holes DH may be formed as described with reference to FIG.13O, followed by removing the upper portions of the plurality of firstto third insulating walls 150A, 150B, and 150C, which define the sidesurfaces of the plurality of damascene holes DH, by using a wet etchingprocess, thereby forming the first insulating wall 550A including therecessed side surface AS2 and the second insulating wall 550B includingthe recessed side surface AS4. After that, the second insulating spacerSPB may be formed and cover the recessed side surfaces AS2 and AS4 ineach of the plurality of damascene holes DH, and the resistive memorylayer 148 and the top electrode layer TE5 may be formed in each of theplurality of damascene holes DH by a similar method to the methoddescribed with reference to FIGS. 13P and 13Q.

To fabricate the memory device 600 shown in FIG. 9, in the processdescribed with reference to FIG. 13M, when the plurality of stackstructures each including the bottom electrode layer BE, the selectiondevice layer 142, the interfacial layer 144, and the intermediateelectrode layer ME are formed by etching the preliminary firstinsulating spacer PSPA1, the preliminary intermediate electrode layerPME, the preliminary interfacial layer P144, the preliminary selectiondevice layer P142, and the preliminary bottom electrode layer PBE byusing the second mask pattern 180 as an etch mask, the plurality ofholes HS may be formed such that each of the holes HS has a decreasingwidth in the second direction (Y direction) with decreasing distancefrom the substrate 102. After that, the filling insulating film isformed in the plurality of holes HS by a method similar to the methoddescribed with reference to FIG. 3N, followed by planarizing theresultant product illustrated by FIG. 13M such that the top portion ofthe filling insulating film and the second mask pattern 180 are removed,thereby forming the plurality of memory cell pillars 640 having inclinedside surfaces and the third insulating walls 650C having inclined sidesurfaces, as shown in FIG. 9.

Although the inventive concept has been particularly shown and describedwith reference to example of the inventive concept thereof, it will beunderstood that various changes in form and details may be made theretowithout departing from the spirit and scope of the inventive concept asdefined by the following claims.

What is claimed is:
 1. A memory device comprising: a first conductiveline extending over a substrate in a first direction; a secondconductive line extending over the first conductive line in a seconddirection that intersects the first direction; a memory cell pillarinterposed between the first conductive line and the second conductiveline; and an insulating wall disposed upright on the substrate, theinsulating wall facing a side surface of the memory cell pillar, whereinthe memory cell pillar comprises: a resistive memory layer; a heatingelectrode layer which heats the resistive memory layer, and which has anL-shaped cross-section and comprises a base portion extending parallelto the first conductive line and a fin portion extending from an end ofthe base portion in a direction away from the first conductive line; anda selection device layer between the first conductive line and theheating electrode layer; and a side surface of the selection devicelayer which faces the insulating wall, and a side surface of the finportion, which faces the insulating wall, extend along a first straightline.
 2. The memory device according to claim 1, wherein the memory cellpillar further comprises an intermediate electrode layer between theselection device layer and the heating electrode layer, and theintermediate electrode layer has a side surface facing the insulatingwall and extending along the first straight line.
 3. The memory deviceaccording to claim 2, wherein the memory cell pillar further comprisesan interfacial layer, which is between the selection device layer andthe intermediate electrode layer and comprises a nonmetallic material,and the interfacial layer has a side surface facing the insulating walland extending along the first straight line.
 4. The memory deviceaccording to claim 1, wherein the memory cell pillar further comprises abottom electrode layer between the first conductive line and theselection device layer, and the bottom electrode layer has a sidesurface facing the insulating wall and extending along the firststraight line.
 5. The memory device according to claim 1, wherein theresistive memory layer has a bottom surface which contacts a top surfaceof the fin portion of the heating electrode layer, the top surface beingfarthest in the fin portion from the first conductive line, and whereinthe memory cell pillar further comprises: a first insulating spacerfilling a reentrant corner portion and contacting the bottom surface ofthe resistive memory layer, the reentrant corner portion being definedby the base portion and the fin portion of the heating electrode layer,and the area of a first bottom surface of the bottom surface of theresistive memory layer, which contacts the top surface of the finportion, is less than the area of a second bottom surface of the bottomsurface of the resistive memory layer, which contacts the firstinsulating spacer.
 6. The memory device according to claim 5, whereinthe resistive memory layer has a side surface facing the insulating walland extending from the fin portion toward the second conductive line ina direction that is parallel to the first straight line.
 7. The memorydevice according to claim 5, wherein the top surface of the fin portionand a top surface of the first insulating spacer, which faces theresistive memory layer, extend on one plane, and the bottom surface ofthe resistive memory layer extends flat along the one plane.
 8. Thememory device according to claim 5, wherein a first distance from thefirst conductive line to the top surface of the fin portion is differentfrom a second distance from the first conductive line to a top surfaceof the first insulating spacer, which faces the resistive memory layer,and the bottom surface of the resistive memory layer comprises the firstbottom surface facing the top surface of the fin portion, the secondbottom surface facing the first insulating spacer, and a step betweenthe first bottom surface and the second bottom surface.
 9. The memorydevice according to claim 5, wherein a first distance from the firstconductive line to the top surface of the fin portion is less than asecond distance from the first conductive line to a top surface of thefirst insulating spacer, which faces the resistive memory layer.
 10. Thememory device according to claim 5, wherein a first distance from thefirst conductive line to the top surface of the fin portion is greaterthan a second distance from the first conductive line to a top surfaceof the first insulating spacer, which faces the resistive memory layer.11. The memory device according to claim 5, wherein the resistive memorylayer has a side surface facing the insulating wall and extending fromthe fin portion toward the second conductive line in a direction that isnot parallel to the first straight line.
 12. The memory device accordingto claim 5, wherein the resistive memory layer has increasing widths inthe first direction and the second direction with decreasing distancefrom the second conductive line.
 13. The memory device according toclaim 5, wherein the resistive memory layer has a reverse truncatedpyramid shape.
 14. The memory device according to claim 5, wherein thememory cell pillar further comprises a top electrode layer between theresistive memory layer and the second conductive line, and the topelectrode layer has a reverse truncated pyramid shape.
 15. The memorydevice according to claim 5, wherein the memory cell pillar furthercomprises a top electrode layer between the resistive memory layer andthe second conductive line, and the resistive memory layer and the topelectrode layer form one reverse truncated pyramid shape.
 16. The memorydevice according to claim 5, further comprising: a second insulatingspacer between the top surface of the fin portion and the secondconductive line, the second insulating spacer having a ring shapesurrounding the resistive memory layer.
 17. The memory device accordingto claim 16, wherein the insulating wall comprises a flat side surfacecontacting the fin portion, and a recessed side surface, which faces theresistive memory layer and is recessed in a direction away from theresistive memory layer, and the second insulating spacer covers therecessed side surface.
 18. The memory device according to claim 1,wherein the insulating wall has a side surface inclined with respect toa vertical line that is along a third direction perpendicular to each ofthe first direction and the second direction, and the selection devicelayer has a decreasing width in the second direction with increasingdistance from the first conductive line.
 19. The memory device accordingto claim 1, wherein the resistive memory layer includes a phase-changematerial that reversibly changes between an amorphous state and acrystalline state in response to heat from the heating electrode layer.20. The memory device according to claim 19, wherein the phase-changematerial includes a chalcogenide.